DATA SHEET
Product specification
File under Integrated Circuits, IC04
January 1995
INTEGRATED CIRCUITS
HEF4060B
MSI
14-stage ripple-carry binary
counter/divider and oscillator
For a complete data sheet, please also download:
The IC04 LOCMOS HE4000B Logic
Family Specifications HEF, HEC
The IC04 LOCMOS HE4000B Logic
Package Outlines/Information HEF, HEC
January 1995
2
Philips Semiconductors
Product specification
14-stage ripple-carry binary
counter/divider and oscillator
HEF4060B
MSI
DESCRIPTION
The HEF4060B is a 14-stage ripple-carry binary
counter/divider and oscillator with three oscillator terminals
(RS, R
TC
and C
TC
), ten buffered outputs (O
3
to O
9
and
O
11
to O
13
) and an overriding asynchronous master reset
input (MR). The oscillator configuration allows design of
either RC or crystal oscillator circuits. The oscillator may
be replaced by an external clock signal at input RS. The
counter advances on the negative-going transition of RS.
A HIGH level on MR resets the counter (O
3
to O
9
and
O
11
to O
13
= LOW), independent of other input conditions.
Schmitt-trigger action in the clock input makes the circuit
highly tolerant to slower clock rise and fall times.
Fig.1 Functional diagram.
Fig.2 Pinning diagram.
PINNING
FAMILY DATA, I
DD
LIMITS category MSI
See Family Specifications
MR
master reset
RS
clock input/oscillator pin
R
TC
oscillator pin
C
TC
external capacitor connection
O
3
to O
9
counter outputs
O
11
to O
13
HEF4060BP(N):
16-lead DIL; plastic (SOT38-1)
HEF4060BD(F):
16-lead DIL; ceramic (cerdip) (SOT74)
HEF4060BT(D):
16-lead SO; plastic (SOT109-1)
( ): Package Designator North America
January 1995
3
Philips Semiconductors
Product specification
14-stage ripple-carry binary counter/divider
and oscillator
HEF4060B
MSI
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Fig.3 Logic diagram.
January 1995
4
Philips Semiconductors
Product specification
14-stage ripple-carry binary counter/divider
and oscillator
HEF4060B
MSI
AC CHARACTERISTICS
V
SS
= 0 V; T
amb
= 25
C; C
L
= 50 pF; input transition times
20 ns
V
DD
V
SYMBOL
MIN.
TYP.
MAX.
TYPICAL EXTRAPOLATION
FORMULA
Propagation delays
RS
O
3
5
210
420
ns
183 ns
+
(0,55 ns/pF) C
L
HIGH to LOW
10
t
PHL
80
160
ns
69 ns
+
(0,23 ns/pF) C
L
15
50
100
ns
42 ns
+
(0,16 ns/pF) C
L
5
210
420
ns
183 ns
+
(0,55 ns/pF) C
L
LOW to HIGH
10
t
PLH
80
160
ns
69 ns
+
(0,23 ns/pF) C
L
15
50
100
ns
42 ns
+
(0,16 ns/pF) C
L
O
n
O
n
+
1
5
25
50
ns
HIGH to LOW
10
t
PHL
10
20
ns
15
6
12
ns
5
25
50
ns
LOW to HIGH
10
t
PLH
10
20
ns
15
6
12
ns
MR
O
n
5
100
200
ns
73 ns
+
(0,55 ns/pF) C
L
HIGH to LOW
10
t
PHL
40
80
ns
29 ns
+
(0,23 ns/pF) C
L
15
30
60
ns
22 ns
+
(0,16 ns/pF) C
L
Output transition
5
60
120
ns
10 ns
+
(1,0 ns/pF) C
L
times
10
t
THL
30
60
ns
9 ns
+
(0,42 ns/pF) C
L
HIGH to LOW
15
20
40
ns
6 ns
+
(0,28 ns/pF) C
L
5
60
120
ns
10 ns
+
(1,0 ns/pF) C
L
LOW to HIGH
10
t
TLH
30
60
ns
9 ns
+
(0,42 ns/pF) C
L
15
20
40
ns
6 ns
+
(0,28 ns/pF) C
L
Minimum clock pulse
5
120
60
ns
width input RS
10
t
WRSH
50
25
ns
HIGH
15
30
15
ns
Minimum MR pulse
5
50
25
ns
width; HIGH
10
t
WMRH
30
15
ns
15
20
10
ns
Recovery time
5
160
80
ns
for MR
10
t
RMR
80
40
ns
15
60
30
ns
Maximum clock pulse
5
4
8
MHz
frequency input RS
10
f
max
10
20
MHz
15
15
30
MHz
January 1995
5
Philips Semiconductors
Product specification
14-stage ripple-carry binary counter/divider
and oscillator
HEF4060B
MSI
AC CHARACTERISTICS
V
SS
= 0 V; T
amb
= 25
C; input transition times
20 ns
Notes
1. where:
f
i
= input frequency (MHz)
f
o
= output frequency (MHz)
C
L
= load capacitance (pF)
V
DD
= supply voltage (V)
C
t
= timing capacitance (pF)
f
osc
= oscillator frequency (MHz)
RC oscillator
V
DD
V
TYPICAL FORMULA FOR P (
W)
(1)
Dynamic power dissipation
5
700 f
i
+
f
o
C
L
V
DD
2
per package
10
3 300 f
i
+
f
o
C
L
V
DD
2
(P)
15
8 900 f
i
+
f
o
C
L
V
DD
2
Total power dissipation
5
700 f
osc
+
f
o
C
L
V
DD
2
+
2C
t
V
DD
2
f
osc
+
690
V
DD
when using the
10
3 300 f
osc
+
f
o
C
L
V
DD
2
+
2C
t
V
DD
2
f
osc
+
6 900
V
DD
on-chip oscillator (P)
15
8 900 f
osc
+
f
o
C
L
V
DD
2
+
2C
t
V
DD
2
f
osc
+
22 000
V
DD
Fig.4 External component connection for RC oscillator.
Typical formula for oscillator frequency:
f
osc
1
2,3
R
t
C
t
---------------------------------
=
January 1995
6
Philips Semiconductors
Product specification
14-stage ripple-carry binary counter/divider
and oscillator
HEF4060B
MSI
Timing component limitations
The oscillator frequency is mainly determined by
R
t
C
t
, provided R
t
<< R2 and R2C2 << R
t
C
t
. The function
of R2 is to minimize the influence of the forward voltage
across the input protection diodes on the frequency. The
stray capacitance C2 should be kept as small as possible.
In consideration of accuracy, C
t
must be larger than the
inherent stray capacitance. R
t
must be larger than the
LOCMOS `ON' resistance in series with it, which typically
is 500
at V
DD
= 5 V, 300
at V
DD
= 10 V and 200
at
V
DD
= 15 V.
The recommended values for these components to
maintain agreement with the typical oscillation formula are:
C
t
100 pF, up to any practical value,
10 k
R
t
1 M
.
Typical crystal oscillator circuit
In Fig.5, R2 is the power limiting resistor. For starting and
maintaining oscillation a minimum transconductance is
necessary.
Fig.5
External component connection for crystal
oscillator.
Fig.6
Test set-up for measuring forward transconductance g
fs
= di
o
/dv
i
at v
o
is constant (see also graph Fig.7);
MR = LOW.
January 1995
7
Philips Semiconductors
Product specification
14-stage ripple-carry binary counter/divider
and oscillator
HEF4060B
MSI
Fig.7
Typical forward transconductance g
fs
as a
function of the supply voltage at T
amb
= 25
C.
A: average
B: average + 2 s,
C: average
-
2 s, where `s' is the observed standard deviation.
Fig.8
RC oscillator frequency as a function of
R
t
and C
t
at V
DD
= 5 to 15 V; T
amb
= 25
C.
C
t
curve at R
t
= 100 k
; R2 = 470 k
.
R
t
curve at C
t
= 1 nF; R2 = 5 R
t
.
Fig.9
Oscillator frequency deviation (
f
osc
) as a function of ambient temperature; referenced at: f
osc
at
T
amb
= 25
C and V
DD
= 10 V.
___ R
t
= 100 k
; C
t
= 1 nF; R2 = 0.
- - - R
t
= 100 k
; C
t
= 1 nF; R2 = 300 k
.
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